PART |
Description |
Maker |
HYS72T32000HU-3.7-A HYS72T32000HU-5-A |
256MB - 2GB, 240pin
|
Infineon
|
M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet 256MB DDR SDRAM MODULE
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
TS2GJF220 |
2GB USB2.0 JetFlash垄芒220 2GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
HYS64D64020GBDL-5-C |
128MB-1GB, 200pin Small outlines for Laptop
|
Infineon
|
HYMD512M646DFP8-D43 HYMD512M646DFP8-H HYMD512M646D |
200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)
|
Hynix Semiconductor
|
HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EM484M1684VBA-7FE EM484M1684VBA-75FE EM484M1684VBA |
256Mb (4MBank6) Synchronous DRAM 256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|